Improved Performance of Silicon-Germanium Solar Cell Based on Optimization of Layer Thickness

Authors

  • Nadir Shah School of Energy and Power Engineering, Chongqing University, Chongqing, China
  • Ahsan Zafar School of Electrical and Information Engineering, Tianjin University, Tianjin, China https://orcid.org/0000-0002-2981-9779

DOI:

https://doi.org/10.33959/cuijca.v5i1.53

Abstract

Electrical energy has become an essential part of our life. Therefore, its supply must be sustainable, economical, and environment-friendly. The conversion of sunlight into electricity is made possible through the solar cell, a semiconductor device, however, the conversion efficiency of these cells is low which can be further improved. This research work presents the design and performance analysis of silicon-germanium (Si-Ge) solar cells. Amorphous silicon / crystalline silicon Heterojunction (a-Si/c-Si HIT) solar, Ge, Si-Ge alloy with 25% Si concentration solar cells are designed in Afors-Het software. An improved conversion efficiency (?) of 25.23%, 5.125%, and 11.53%, respectively is achieved.

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Published

2022-12-07

How to Cite

Shah, N., & Zafar, A. (2022). Improved Performance of Silicon-Germanium Solar Cell Based on Optimization of Layer Thickness. City University International Journal of Computational Analysis, 5(1), 1–10. https://doi.org/10.33959/cuijca.v5i1.53

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